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Selective Area Growth Technique |
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Selective Area Growth (SAG) is a technique for bandgap engineering, which allows for growing different wavelength regions across a single wafer with one run. In essence, the process starts with defining a dielectric mask on the surface of a plain wafer. Due to the surface migration and gas-phase diffusion, the material between the patterns have different growth rate and composition, than the material far from them. Thus, the geometry and the dimension of this mask determine the spectral properties of the semiconductor material. The following picture shows 6 InGaAsP QWs grown between the patterns as well as the interface region formed close to the dielectric mask.
The growth rate between the patterns linearly increases with increasing the mask width. The higher growth rate, the thicker the QWs, and thus the smaller the bandgap. The following is an example of 6 QWs grown at the same time in four different regions with different mask widths, w.
SAG technique is a very powerful method enabling the monolithic integration of devices with different spectral properties in a PIC. Integration of active with passive waveguides, active devices with mode converters, optical amplifiers with electroabsorption modulators, broad spectrum light emitting diodes, laser arrays for WDM systems, multi-section optical equalizers and many others are possible. |
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SAG technique is a very powerful method enabling the monolithic integration of devices with different spectral properties. This presentation contains more information on the subject. A PDF version is also available. |
See a collection of SEM photos showing the properties of the SAG techniques. Example pictures from a SAG two-sections device are presented. |
This page contains a list of publications related to the project. |
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