SEM / TMAFM images on Nanolithography and Nanostructures
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| (SEM) "Tough stuff" : Copolymer microphase separation can be observed on rough / irregular surfaces as long as the surface irregularity is in the length scale much longer than the periodicity of the pattern (~40nm). |
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| (SEM) Hole array transferred into GaAs (100) surface using wet chemical etching. |
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| (SEM) Hole array transferred into GaAs (311)B surface using wet chemical etching. |
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| (SEM) InAs nanostructures examined using Hitachi 4700. Coalescence of adjacent nanostructures due to coalescence of neighboring holes is clearly shown. Crystal facets are resolved as well. |
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| (TMAFM) Typical GaAs nanostructures by selective area growth. |
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| (TMAFM) Uniform InAs nanostructures selectively grown under optimized MOCVD growth condition. |
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| (TMAFM) GaN nanostructure array selectively grown on GaN buffer. |
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| (TMAFM) InGaN nanostructures selectively grown on GaN buffer surface. |