A  presentation 

This presentation gives an overview of this project. PDF format is available.

Regularly ordered uniform nanostructures have attracted attentions for their potential as the active elements in nanoscale computation, recording media and optoelectronic devices such as lasers and detectors. A novel way to achieve uniform nanostructures developed here at CSL is to selectively grow III-V compound semiconductors into ordered holes patterned by block copolymer nanolithography.

Block copolymer lithography is a patterning technique first developed at Princeton University ^[1] and first used at USC/CSL in GaAs-based material system for the fabrication of nanostructure arrays ^[2]. This patterning technique overcomes some of the limitations of the current nanoscale lithography. 

  (Al)(Ga)As(P) and nanostructure arrays can be fabricated by selectively grow corresponding III-V materials into the arrays of holes patterned in a thin layer of SiN_x mask film using Metalorganic Chemical Vapor Deposition. The uniformity of the nanostructure array can be optimized though optimizing growth condition. Nanostructures fabricated this way are defect free single crystals.

 (In)GaN nanostructures arrays are under study as well by my Collegue. (In)GaN nanostructures

 Recent results !!!

Photo gallery

See a collection of SEM and TMAFM images of various selectively grown nanostructures.

  Process flowchart

 To find out the details about block copolymer lithography, following the link.

  List of related publications

This page contains a list of publications related to the project. 

  Group Members participating in the research

1. Ruijuan R. Li

2. Xingang Zhang

3. Lisandra Pataro

Our Princeton collaborators' homepage: Christopher Harrison.