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    Vertical cavity surface emitting lasers (VCSELs) operating at 1.3 mm have gained considerable interest for optical communication systems and data links. However, it has been difficult to produce high quality 1.3 micron VCSEL because no good combination of high contrast distributed Bragg reflector (DBR) and a gain material exists. Many research groups have worked to develop 1.3 micron light emitting materials on GaAs substrates because they are compatible with well-developed GaAs/AlAs DBR and AlAs oxidation techniques, which are beneficial for high performance VCSELs. But, it is not easy to find materials to be grown on GaAs substrates with bandgaps that are suitable for 1.3 micron emission. Several materials, such as GaInNAs quantum well (QW), GaAsSb QW, and InGaAs quantum dots, have been studied. Here in USC, GaAsSb/InGaAs type-II W structure QW and InGaAs Strain Compensate QW VCSEL have been investigated.

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  List of related publications

This page contains a list of publications related to the project. 

  Group Members participating in the research

1. Yuanming Deng

2. Joshua Abell

 Recent results !!!