Background
Information GaN and related materials such as AlGaN are III-V nitride semiconductors with wurzide crystal structure and a direct band gap. By alloying GaN with Aluminum or Indium, the resultant emission could cover the green blue end of the visible light spectrum and extend to the ultraviolet range(6.2eV to 1.95eV).
GaN was
recognized as the best photonic materials for green-blue emitting solid
state light source, which is an indispensable element for the new
generation of full-color displays, full-color laser printers etc
Application 1.
Project goal We will develop and demonstrate state of art blue and UV lasers based on selective area growth and lateral overgrowth. |
High
density information storage|
SEM Gallery |
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 GaN
links :
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This page contains a list of publications related to the project. |
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