| Title | Anisotropic Mg incorporation in GaN growth on nonplanar templates |
| Publication Type | Journal Article |
| Year of Publication | 2005 |
| Authors | Ren, D., and D. P. Dapkus |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Pagination | 121901 |
| Keywords | cathodoluminescence, gallium compounds, III-V semiconductors, impurity distribution, magnesium, MOCVD, scanning electron microscopy, semiconductor doping, semiconductor epitaxial layers, semiconductor growth, surface structure, wide band gap semiconductors |
| URL | http://link.aip.org/link/?APL/86/121901/1 |
| DOI | 10.1063/1.1870121 |