Compound Semiconductor Laboratory
P. Daniel Dapkus
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Adamczyk, O
Adamson, D H
Ahn, Byungmin
Akhavan, Hooman
Aoki, M
Bagheri, Mahmood
Beausoleil, Raymond G
Beyler, C A
Bond, A E
Burger, Johan
Cao, J R
Chaikin, P M
Chen, Q
Chen, P
Cheng, Yong
Choi, Seung-June
Choi, Seung June
Choi, Sang Jun
Choi, S -J
Choi, W -J
Choi, Won-Jin
Choi, S J
Choi, Sang-Jun
Christen, Louis
Chu, Hyung-Joon
Coldren, L A
Connolly, J
Crawford, F D
Dapkus, Daniel P
Dapkus, Daniel. P
Dapkus, P D
Deng, Yuanming
Deppe, D G
Djordjev, Kostadin
Dubovitsky, Serge
Dzurko, K M
Farrell, Stephen
Fetterman, H R
Frateschi, N C
Garmire, E
Geske, J
Govindarajan, M
Griffel, G
Grodzinski, P
Gundersen, M A
Hadizad, P
Harrison, C
Hummel, S G
Hur, J H
Hwang, Eui Hyun
Jang, J W
Jansen, M
Jayaraman, V
Jeong, W G
Jow, M Y
Kaviani, K
Kawase, M
Khatsevich, S
Kim, H D
Kim, W -J
Kim, B G
Kim, In
Kobayashi, J T
Kobayashi, N P
Komori, M
Kuang, Wan
Kuang, W
Lee, Po-Tsung
Lee, J H
Lee, D
Lee, W I
Lee, Wei-I
Lee, H C
Levi, A F J
Li, R R
Li, Y
Li, Yunchu
Lin, W
Lin, Chao-Kun
Lin, Yen-Ting
Lin, Yen Ting
Lu, Ling
Maa, B Y
MacDougal, M H
Madhukar, A
Marshall, William
Marshall, W K
Mathur, A
McManus, J V
Menna, R
Menu, E P
Mock, A
Nakano, Aiichiro
Nottenburg, R N
Nottenburg, R
Nutt, Steven R
O'Brien, John
O'Brien, John D
Ohtoshi, T
Osinski, J S
Ou, S S
Pataro, L L
Peng, Zhen
Pudikov, V
Pyun, S H
Rammohan, K
Register, R A
Ren, Dawei
Rich, Daniel H
Rich, D H
Rideout, W C
Rideout, W
Sadagopan, T
Sahara, R T
Sato, H
Sburlan, Suzana
Schlafer, J
Seung June, C
Shafiiha, Roshanak
Sharfin, W F
Shih, Min Hsiung
Siala, S
Skromme, B J
Song, Muping
Stapleton, Andrew
Steier, W H
Stevenson, R
Stewart, Lawrence S
Suh, N -K
Thompson, M E
Tishinin, Denis
Tishinin, D
Tsuchiya, T
Uomi, K
Uppal, Kushant
Wei, Zhi-Jian
Willner, Alan E
Yang, Qi
Yang, Tian
Yang, Jeng-Yuan
Yang, T
Yang, Gye Mo
Yang, J J
Yang, Q
Yeh, Ting-Wei
Yeh, Ting Wei
Yim, J S
Yu, Haixia
Zhang, X
Zhang, Xingang
Zhang, Lin
Zhang, Bo
Zhang, Y
Zhao, Hanmin
Zhao, H
Zhou, W
Zhu, Daniel X
Ziari, M
Zou, Y
Journal Article
Conference Paper
Report
2012
2011
2010
2009
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1989
1980
10 GHz
10 micron
1200 angstrom
140 muA
29 mA
293 to 298 K
3 micron
3.2 mum
300 mW
8.7 muA
Al2O3
AlAs-GaAs
AlGaAs
AlInP
aluminium compounds
annealing
arithmetic chirping
asymmetric heterostructure laser
atomic force microscopy
backgating reduction
bandwidth
bound state formation
buried heterostructure resonators
buried layers
carrier lifetime
cathodoluminescence
cavity resonators
chirped semiconductor/oxide pairs
circular microresonator modulator
cladding period
compressively-strained MQW lasers
conducting channel
continuous-wave lasing
continuous-wave operation
Coupled resonators
crystal defects
current constriction
DBR
device characteristics
diode laser
dislocation density
dispersion minima
distributed Bragg reflector lasers
distributed Bragg reflectors
double-heterostructure photonic microcavity crystal
elasticity
electrically insulating mirror
electro-optical modulation
electroabsorption
electron traps
electron-hole recombination
energy gap
epitaxial growth
excited states
excitons
Fabry-Perot resonators
far-field radiation patterns
Fermi level
Fiber optics and optical communications
fiber-coupled peak output power
Filters
finite difference time-domain analysis
finite-difference time-domain methods
free carrier injection
GaAs-AlO
gain nonlinearities
GaInP
gallium arsenide
gallium compounds
geometric chirping
goniometry
Green function
Green's function methods
high refractive index layer
high temperature lasing operation
high wallplug efficiency
high-contrast Bragg reflector
high-power laser
high-Q filter
hole traps
III-V semiconductors
improved sidemode suppression ratio
impurity distribution
indium compounds
InGaAs
InGaAsP-Al2O3
InGaAsP-InP
integrated optics
Integrated optoelectronic circuits
integrated optoelectronics
integrated resonators
interface states
intracavity p-contact
ion bombardment
ion implantation
k.p calculations
laser cavity resonators
laser mirrors
laser mode structure
laser modes
laser resonators
Lasers and laser optics
lasing threshold
lattice defect lasers
lattice-shifted cavity
LEDs
light emitting diodes
light interferometry
light transmission
linewidth response
localised states
loss-cancellation
low refractive index layer
low-power lasers
magnesium
maximum output powers
membranes
MESFETs
micro-optics
microcavities
microcavity design
microcavity laser
microcavity lasers
microdisc lasers
microresonator platform technology
microtoroidal structures
minority carrier lifetime
Mirrors
MOCVD
MOCVD coatings
mode control
mode discrimination
mode profiles
modified laser cavity
modulation bandwidth
modulation bandwidths
modulation response
modulation speed
Modulators
molecular beam epitaxial growth
monolithically integrated native oxide
multiple bound states
nanofabrication
nanophotonics
nanorods
nanostructured materials
nanowires
native oxide
native oxide buffer layer
near critical coupling
offset quantum wells
Optical devices
optical dispersion
optical fabrication
optical fibre cladding
optical field control
optical filters
Optical interconnects
optical linewidth
optical loss
optical losses
optical materials
optical modulation
optical prisms
optical pumping
optical resonators
optical switchesactive switching components
optical tuning
optical waveguides
Optoelectronics
output power
oxidation
peak reflectivity
periodicity
phase modulation
phase separation
photoluminescence
photonic band gap
photonic crystal double heterostructure
photonic crystal double-heterostructure resonant cavities
photonic crystal heterostructure laser
photonic crystal laser
photonic crystal laser cavities
photonic crystal laser cavity
photonic crystal membrane
photonic crystal microcavities
photonic crystal microcavity lasers
photonic crystals
photonic crystalsfinite-difference time-domain method
Photonic integrated circuits
power 60 muW
power pumping condition
Q modes
Q-factor
quality factor
quality factors
quantum dot active regions
quantum dot lasers
quantum dot lasersgain nonlinearities
quantum well devices
quantum well lasers
quantum well lasersAl2O3
quantum well laserscarrier capture
quantum wells
quasiFermi level variation
QW membrane laser array fabrication
radiative lifetimes
reflectance band broadening
reflectivities
reflectivity
reflectivity bandwidth
refractive index
resonant cavities
resonant frequency tuning
resonant modes
resonant wavelength
resonant wavelength tuning
reversed-mesa ridge-waveguide structures
rib waveguides
ridge waveguides
ring resonators
room temperature CW operation
room temperature operation
room-temperature lasing
sapphire
sapphire bonding
sapphire-bonded laser
scanning electron microscopy
Schottky gate field effect transistors
selective oxidation
semiconductor device measurement
semiconductor doping
semiconductor epitaxial layers
semiconductor growth
semiconductor laser arraysInGaAsP
Semiconductor lasers
semiconductor lasers asymmetric heterostructure design
semiconductor lasers20 degC
semiconductor lasersAlAs oxide/GaAs multilayers
semiconductor lasersD3 laser cavity
semiconductor lasersdouble-heterostructure laser cavity
semiconductor microdisk lasers
semiconductor microdisk resonators
semiconductor optical amplifier
semiconductor optical amplifiers
semiconductor quantum dots
semiconductor quantum wells
semiconductor quantum wells 200 mum
semiconductor quantum wires
semiconductor technology-17 V
Semiconductors
seven-pair structures
side mode suppression
side-mode-suppression-ratio mode
single quantum well
smart pixels
spectral analysisFabry-Perot resonances
spectral line breadth1 GHz
spectral line shift
spectral properties
strained-layer MQW lasers
substrates
surface composition
surface emitting lasers
surface emitting lasers AlAs-GaAs
surface emitting lasers1.2 mW
surface emitting lasers400 to 1400 nm
surface segregation
surface structure
surface texture
suspended membrane microcavity
temperature 293 K to 298 K
thermal effects
thermo-optical effectsInP
three-dimensional FDTD
three-dimensional finite-difference time-domain method
time resolved spectra
transmission electron microscopy
two-dimensional photonic crystal lasers
ultralow threshold current
ultralow threshold current laser
vapour phase epitaxial growth
VCSEL
VCSELs
vertical-cavity surface-emitting laser
vertical-cavity surface-emitting lasers
wafer bonding
waveguide cladding
waveguide lasers
waveguide lasers165 degC
wavelength filter
wavelength range
wide band gap semiconductors
wide-bandwidth distributed Bragg reflectors
X-ray diffraction
