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K
Khatsevich, S., D. H. Rich, X. Zhang, W. Zhou, and D. P. Dapkus, "Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence", Journal of Applied Physics, vol. 95, no. 4: AIP, pp. 1832-1842, 2004.
R
Ren, D., W. Zhou, and D. P. Dapkus, "Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111901, 2005.