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2007
Khatsevich, S., D. H. Rich, X. Zhang, and D. P. Dapkus, "Correlating exciton localization with compositional fluctuations in InGaN/GaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms", Journal of Applied Physics, vol. 102, no. 9: AIP, pp. 093502, 2007.
2005
Ren, D., and D. P. Dapkus, "Anisotropic Mg incorporation in GaN growth on nonplanar templates", Applied Physics Letters, vol. 86, no. 12: AIP, pp. 121901, 2005.
Ren, D., W. Zhou, and D. P. Dapkus, "Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111901, 2005.
2004
Khatsevich, S., D. H. Rich, X. Zhang, W. Zhou, and D. P. Dapkus, "Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence", Journal of Applied Physics, vol. 95, no. 4: AIP, pp. 1832-1842, 2004.
2000
Li, R. R., D. P. Dapkus, M. E. Thompson, W. G. Jeong, C. Harrison, P. M. Chaikin, R. A. Register, and D. H. Adamson, "Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography", Applied Physics Letters, vol. 76, issue 13, pp. 1689, 2000.
Zhang, X., R. R. Li, D. P. Dapkus, and D. H. Rich, "Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique", Applied Physics Letters, vol. 77, issue 14, pp. 2213, 2000.
Zhang, X., D. P. Dapkus, and D. H. Rich, "Lateral epitaxy overgrowth of GaN with NH[sub 3] flow rate modulation", Applied Physics Letters, vol. 77, issue 10, pp. 1496, 2000.
Li, R. R., D. P. Dapkus, M. E. Thompson, W. G. Jeong, C. Harrison, P. M. Chaikin, R. A. Register, and D. H. Adamson, "Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography", Applied Physics Letters, vol. 76, no. 13: AIP, pp. 1689-1691, 2000.
1998
Zhang, X., D. H. Rich, C. - K. Lin, and D. P. Dapkus, "Cathodoluminescence study of disordering of GaAs/AlGaAs quantum wells using an AlAs native oxide and thermal annealing technique", Journal of Applied Physics, vol. 84, issue 2, pp. 1095, 1998.
Zhang, X., D. H. Rich, J. T. Kobayashi, N. P. Kobayashi, and D. P. Dapkus, "Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence", Applied Physics Letters, vol. 73, no. 10: AIP, pp. 1430-1432, 1998.
1997
Rammohan, K., D. H. Rich, M. H. MacDougal, and D. P. Dapkus, "Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique", Applied Physics Letters, vol. 70, issue 12, pp. 1599, 1997.
Kobayashi, N. P., J. T. Kobayashi, D. P. Dapkus, W. - J. Choi, A. E. Bond, X. Zhang, and D. H. Rich, "GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer", Applied Physics Letters, vol. 71, no. 24: AIP, pp. 3569-3571, 1997.
Lin, C. - K., X. Zhang, D. P. Dapkus, and D. H. Rich, "Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique", Applied Physics Letters, vol. 71, no. 21: AIP, pp. 3108-3110, 1997.
1993
Zou, Y., J. S. Osinski, P. Grodzinski, D. P. Dapkus, W. Rideout, W. F. Sharfin, and F. D. Crawford, "Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 μm quantum well lasers", Applied Physics Letters, vol. 62, issue 2, pp. 175, 1993.
Zou, Y., J. S. Osinski, P. Grodzinski, D. P. Dapkus, W. C. Rideout, W. F. Sharfin, J. Schlafer, and F. D. Crawford, "Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers", IEEE Journal of Quantum Electronics, vol. 29, issue 6, pp. 1565 - 1575, 1993.